三星、SK 海力士大幅扩大HBM产量以满足不断增长的需求，近期与英伟达达成交易

三星、SK 海⼒⼠为满⾜不断增长的需求⽽⼤幅提升 HBM 产量，近期与英伟达达成交易 [NEWS ANALYSIS]【新闻分析】 Samsung Electronics and SK hynix, the world’s two largest memory chipmakers, are increasing semiconductor production as demand surges across the board —from HBM to more commoditized chips like Double Data Rate (DDR) and NAND-based solid-state drives (SSDs). 作为全球最⼤的两⼤存储芯⽚制造商，三星电⼦和SK海⼒⼠正随着各类产品需求全⾯激增⽽扩⼤半导体产量——从HBM到更为商品化的芯⽚，如双倍数据速率（DDR）和基于NAND的固态硬盘（SSD）。 Samsung’s HBM production capacity will likely expand by 50 percent in 2026 compared to the year before, according to multiple domestic media reports,to prepare for massive orders from its top client, Nvidia. 据多家国内媒体报道，为了应对来⾃其最⼤客户英伟达的⼤量订单，三星的HBM⽣产产能预计将在2026年较上⼀年扩⼤50%。 The Suwon, Gyeonggi-based chipmaker projected a potential ramp-up in production and construction of manufacturing facilities in its latest conference call in October of last year. 这家总部位于京畿道⽔原的芯⽚制造商在去年10⽉的最新业绩电话会议上预测了⽣产提升及制造设施建设的潜在推进。 “We are internally reviewing the possibility of expanding HBM production,” said Kim Jae-june, vice president of memory business at Samsung Electronics.三星电⼦存储业务副总裁⾦在俊表⽰：“我们正在内部审查扩⼤HBM⽣产的可能性。” Related Article相关⽂章 Thanks to HBM4, chipmaker declares 'Samsung is back' in New Year messages from vice chair, president 得益于HBM4，芯⽚制造商在副会⻓、总裁的新年致辞中宣告“三星回来了” Samsung flooded with foundry inquiries in U.S. as Elon Musk keeps close eye on Taylor factory 美国晶圆代⼯咨询涌向三星，埃隆·⻢斯克密切关注泰勒⼯⼚ To realize the scale-up, Samsung announced plans to invest 60 trillion won ($41.5 billion) in its upcoming P5 factory in Pyeongtaek, Gyeonggi, following a meeting with President Lee Jae Myung and leaders of major conglomerates in November. The investment is roughly double that of each of Samsung's previous Pyeongtaek facilities. 为实现产能扩张，三星在去年11⽉与李在明总统及主要⼤型企业领导⼈会晤后，宣布计划在位于京畿道平泽的即将建设的P5⼯⼚投资60万亿韩元（约415亿美元）。这⼀投资规模⼤约是三星此前每个位于平泽的⼯⼚的两倍。 Samsung confirmed that P5 construction broke ground in November of last year, with operation commencement set for 2028. News also broke that the construction project for the last chip factory for the Pyeongtaek cluster, P6, is also moving forward. However, a company spokesperson said plans for P6 remain “unconfirmed.” 三星确认，P5项⽬已于去年11⽉破⼟动⼯，预计将在2028年开始投产。与此同时，还有消息称平泽园区最后⼀座芯⽚⼯⼚P6的建设项⽬也在推进中。但公司发⾔⼈表⽰，P6的相关计划仍“未获确认”。 Samsung Electronics Executive Chairman Lee Jae-yong, center, inspects the company's semiconductorR&D center in Giheung, Gyeonggi, on Dec. 22, 2025. [SAMSUNG ELECTRONICS] 2025年12⽉22⽇，三星电⼦会⻓李在镕（中）视察位于京畿道器兴的公司半导体研发中⼼。[SAMSUNG ELECTRONICS] A Pyeongtaek city official familiar with the matter said Samsung is receiving active administrative support to expedite the P5 construction process. ⼀位熟悉情况的平泽市官员表⽰，三星正获得积极的⾏政⽀持，以加快P5项⽬的建设进程。 “Because the P-series facilities are located within a designated industrial complex, any revisions or additional requirements related to construction typically require lengthy approvals — often taking three to four months,” the official said. “We are working to shorten that timeline as much as possible by facilitating coordination among relevant departments and consultations with Gyeonggi Province.” 该官员称：“由于P系列设施位于指定的⼯业园区内，与建设相关的任何修改或新增要求通常都需要较⻓时间的审批，往往需要三到四个⽉。我们正通过协调相关部⻔、并与京畿道进⾏协商，尽可能缩短这⼀时间。” Related Article相关⽂章 前三星员⼯因向中国芯⽚制造商泄露国家指定技术⽽被起诉 Samsung, SK hynix profit projected to near $68 billion each in 2026 on AI supercycle 在⼈⼯智能超级周期推动下，三星和SK海⼒⼠预计在2026年的利润各将接近680亿美元 The Pyeongtaek campus, currently operates four fabs, P1 through P4. Samsung is projected to add around 60,000 wafers per month of DRAM capacity at P4 through the second quarter of 2026, according to KB Securities. 平泽园区⽬前运⾏着P1⾄P4共四座晶圆⼚。据KB证券预测，到2026年第⼆季度，三星将通过P4新增约每⽉6万⽚晶圆的DRAM产能。 Reports said that Samsung received top marks in Nvidia’s internal testing for sixth-generation HBM (HBM4), which will be used in Nvidia’s next-generation Rubinprocessors, outperforming rivals SK hynix and Micron. 报道称，三星在英伟达针对第六代HBM（HBM4）的内部测试中获得最⾼评价。该HBM4将⽤于英伟达的下⼀代Rubin处理器，其表现超越了竞争对⼿SK海⼒⼠和美光。 Samsung’s HBM4 achieved a per-pin data transfer speed of 11 gigabits per second (Gbps), exceeding Nvidia’s standard requirement of 10 Gbps for its Rubin platform. 三星的HBM4实现了每引脚11吉⽐特每秒（Gbps）的数据传输速度，超过了英伟达为其Rubin平台设定的10 Gbps标准要求。 “Internally, there is a palpable sense of excitement, and I believe there is broad consensus that the product itself is highly competitive,” a Samsung Electronics source said. ⼀位三星电⼦内部⼈⼠表⽰：“内部弥漫着明显的兴奋情绪，我认为⼤家已形成⼴泛共识，认为这款产品本⾝具备极强的竞争⼒。” Per-pin data transfer speed measures how fast each individual connection between a memory chip and a processor can transmit data. In HBM, even modest improvements at the per-pin level can translate into significant performance gains. Nvidia has been particularly focused on raising this metric as it competes with AMD’s upcoming MI450 processor, which is also expected to be released in the latter half of this year. 每引脚数据传输速度衡量的是内存芯⽚与处理器之间每⼀个单独连接传输数据的速度。在HBM中，即使是每引脚层⾯上的⼩幅提升，也可能转化为显著的性能增益。随着英伟达与同样预计在今年下半年发布的AMD新⼀代MI450处理器展开竞争，英伟达⼀直尤其重视提升这⼀指标。 Until the end of 2026, HBM wafer monthly