2025存储技术趋势与展望报告：聚焦DRAM和NAND技术

Dr. Jeongdong Choe FMS 2025 Senior Technical Fellow, SVP www.techinsights.com Session 1 ➢DRAM ▪DRAM Market▪Samsung, SK hynix, Micron▪CXMT, Nanya, Winbond, PSMC▪DDR/LPDDR/GDDR/HBM DRAM Bit Production (Expected) DRAM Technology Node (D/R, F) DRAM Pitch Trends: WL, BL D1b(D1β) DRAM Cell: Samsungvs.SK hynixvs.Micron CXMT DRAM:G4 Hybrid Bonding for HBM Application ✓Due to limited HBM module height (Form Factor), HB structures with thinner dies are required Session 2 ➢3D NAND ▪NAND Market▪Samsung, SK hynix/Solidigm▪Micron, KIOXIA, SanDisk, YMTC▪2xxL/2yyL, Hybrid Bonding NAND Market Share (Revenue) 3D NAND Chip Design 3D NAND Bit Density Trend (TLC, QLC) 3D NAND Min. Vertical Gate PitchTrend Mold ThicknessEngineering (Measured) Vertical Channel Holes: OPS Design KIOXIA 20 Holes(No dummy VC) YMTC 16 Holes(No dummy VCs) Micron16 Holes(No dummy VCs) Ex.Micron 276LActive #VC: 16Slit Pitch2.43μmVCP:125.0nm (BL direction) Ex. KIOXIA 218LActive #VC: 20Slit Pitch 3.07 μmVCP: 130.8 nm (BL direction) Ex. YMTC 267LActive #VC: 16Slit Pitch 2.52 μmVCP: 132.0 nm (BL direction) Stairless WLC (YMTC 276L) HybridBondingMemory(NAND)Adoption 3D NAND Hybrid Bonding (HB) Application ▪3D NAND Array-to-Logic HB Chip with High Density and Higher Performance ✓W2W format (YMTC Xtacking 1.0/2.0/3.0/4.0 HB 3D NAND Products, KIOXIA BiCS8 CBA 218L Products)✓3D NAND peripheral circuitry prepared on a wafer separately from a multi-stack processed array wafer✓More solid logic transistors with well VT controlled, more flexible applications✓Challenges: alignment, local uniformity, mechanical stress, topography/CMP dishing voids, cleanliness, Smaller pitches www.techinsights.com