CMOS温度传感器从模块设计到系统设计

Zhong Tang, Xiao-Peng Yu, Zheng Shi, Nianxiong Nick Tan Citation:Zhong Tang, Xiao-Peng Yu, Zheng Shi, Nianxiong Nick Tan, CMOS Temperature Sensors: From Module Design to SystemDesign, Chinese Journal of Electronics, 2025, 34(1), 16-25. doi: 10.23919/cje.2023.00.425. View online: https://doi.org/10.23919/cje.2023.00.425 Related articles that may interest you Parameter Design for Time-Domain Optimization of the Fourth-Order Carrier Loop in a BDS ReceiverChinese Journal of Electronics. 2021, 30(3), 584-594https://doi.org/10.1049/cje.2021.04.012 Global Ramp Uniformity Correction Method for Super-Large Array CMOS Image SensorsChinese Journal of Electronics. 2024, 33(2), 415-422https://doi.org/10.23919/cje.2022.00.397 An Improved Path Delay Variability Model via Multi-Level Fan-Out-of-4 Metric for Wide-Voltage-Range Digital CMOS CircuitsChinese Journal of Electronics. 2023, 32(2), 375-388https://doi.org/10.23919/cje.2021.00.447 Learning Domain-Invariant and Discriminative Features for Homogeneous Unsupervised Domain AdaptationChinese Journal of Electronics. 2020, 29(6), 1119-1125https://doi.org/10.1049/cje.2020.09.013 Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS TechnologiesChinese Journal of Electronics. 2023, 32(6), 1286-1292https://doi.org/10.23919/cje.2021.00.448 Microwave Tomographic Imaging of Anatomically Realistic Numerical Phantoms with Debye Dispersion for Breast Cancer DetectionUsing a Regularized Inverse Scattering Technique in the Time DomainChinese Journal of Electronics. 2023, 32(5), 1133-1150https://doi.org/10.23919/cje.2021.00.343 CMOS Temperature Sensors: From ModuleDesign to System Design Zhong Tang1, Xiao-Peng Yu2, Zheng Shi2, and Nianxiong Nick Tan1,2 1.Vango Technologies,Inc.,Hangzhou 310053,China2.Zhejiang Univerisity,Hangzhou 310027,China Corresponding author: Zhong Tang, Email: tangzhong@vangotech.comManuscript Received March 23, 2024; Accepted May 14, 2024; Published Online June 15, 2024Copyright © 2025 Chinese Institute of Electronics Abstract —In a smart complementary metal-oxide semiconductor (CMOS) temperature sensor, the temperatureinformation is converted to an electrical signal, such as voltage, current, or time delay, and then it is digitized by ananalog-to-digital converter. Instead of categorizing sensors according to their sensing elements, this work introducesdifferent CMOS temperature sensors based on their signal processing domains of the readout circuits. To design asuitable sensor for a specific application, two general design methodologies are also introduced with state-of-the-artexamples. Depending on the applications, the corresponding types of the sensor and design methodology can be cho-sen to optimize the performance. Keywords—CMOS temperature sensor, Time domain, Voltage domain, Bipolar junction transistor, metal-oxide-semiconductor field-effect transistor.Citation—Zhong Tang, Xiao-Peng Yu, Zheng Shi,et al., “CMOS temperature sensors: From module design to system design,”Chinese Journal of Electronics, vol. 34, no. 1, pp. 16–25, 2025. doi: 10.23919/cje.2023.00.425. I. Introduction resolution, power consumption, and area, etc. Dependingon the applications, the requirement of CMOS tempera-ture sensors also varies and there are a lot of trade-offsamong different metrics. For example, the temperaturesensor in Internet of things (IoT) applications should below power [9], while sensors for on-chip thermal manage-ment in SoC should be compact [13]. Of course, as theirbasic function, they should be accurate over their targettemperature range. Thus designing a suitabletempera-ture sensor based on the specific application is challeng-ing.In CMOS processes, many devices have theirtem- As the bridge between the physical and digital worlds,sensors and sensor interfaces are the key components.They are widely used to digitize different types ofana-log signals for further signal processing, such as tempera-ture [1], humidity [2], displacement [3], current [4], [5]etc. Temperature sensors are one of the most popularsensors and are widely used in many applications, suchas environment monitoring, wearable sensing nodes, andthermal management of systems on chip (SoCs) [6]–[10].Thanks to the development of complementary metal-ox-ide semiconductor (CMOS) processes, CMOStempera-ture sensors can integrate the temperature sensingele-ments, their biasing circuitry, and readout circuits in asingle chip, thus converting temperature directly into adigital presentation [11]. This has led to easy integrationand low cost.Driven by different applications, the performance of peraturedependencies,such as resistors,metal-oxide-semiconductorfield-effect transistors(MOSFETs),andbipolar junction transistors (BJTs). In principle, all ofthem can be used for temperature sensing. In [12], theperformance of the published CMOS temperaturesen-sors has been summarized. Some metrics can be normal-ized to compare their performance fai